ME3205F - N-Channel MOSFET

Matsuki

General Description

The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

RDS(ON)≦6mΩ@VGS=10V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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ME3205F n-channel mosfet by Matsuki - Datasheet Preview

Datasheet Details

Part number	ME3205F
Manufacturer	Matsuki
File Size	954.77 KB
Description	N-Channel MOSFET
Datasheet	ME3205F Datasheet

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Full PDF Text Transcription (Reference)

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N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.