ME3205F-G datasheet, mosfet equivalent, Matsuki

Features and benefits

* RDS(ON)≦6mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS

Application

* Power Management
* DC/DC Converter * TheOrdering Information: ME3205F (Pb-free) ME4 ME3205F-G (Green produc.

Description

The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.

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