| Description | The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where lo... |
| Features |
RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON)
APPLICATIONS
Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC
PIN CONFIGURATION
(SOT-23) Top View
Ordering Information: ME2301DC (Pb-free) ME2301DC-G (Green product-Halogen free)
Absolute Maximum Rating...
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| Datasheet |
 ME2301DC Datasheet - 732.65KB |
