ME2301A-G
DESCRIPTION
The ME2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURES
- RDS(ON) ≦75mΩ@VGS=-4.5V
- RDS(ON) ≦95mΩ@VGS=-2.5V
- RDS(ON) ≦130mΩ@VGS=-1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC
(SOT-23) Top View
- The Ordering Information: ME2301A...
