ME2301DC-G
DESCRIPTION
The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package.
FEATURES
RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON)
APPLICATIONS
Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC
PIN CONFIGURATION
(SOT-23) Top View
Ordering Information: ME2301DC (Pb-free) ME2301DC-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25 Unless Otherwise Noted)
Parameter Drain-Source Voltage...
