- 6.0A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GD.

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLP60R190SJ

SLP60R280SJ

SLP60R380SJ

SLP60R460SJ

SLP60R650SJ

SLP60R850SJ

SLP65R190SJ

SLP65R300SJ

SLP65R420SJ

SLP65R500SJ

SLP65R700SJ

SLP65R950SJ

SLP6R-2

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