SLP65R190SJ datasheet, mosfet equivalent, Maple Semiconductor

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 900.52KB)

Features and benefits

- 20A, 650V, RDS(on) typ. = 0.16Ω@VGS = 10 V - Low gate charge ( typical 70nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D .

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the ava.

Image gallery