SLP65R950SJ mosfet equivalent, n-channel mosfet.
- 5A, 650V, RDS(on) typ. = 0.85Ω@VGS = 10 V - Low gate charge ( typical 15nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
T.
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the ava.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 1.14MB)