- 11A, 650V, RDS(on) typ. = 0.38Ω@VGS = 10 V - Low gate charge ( typical 33nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D .

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the ava.

SLP65R190SJ

SLP65R300SJ

SLP65R500SJ

SLP65R700SJ

SLP65R950SJ

SLP60R190SJ

SLP60R280SJ

SLP60R380SJ

SLP60R460SJ

SLP60R650SJ

SLP60R850SJ

SLP6N70U

SLP6R-2

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