- 10A, 600V, RDS(on) typ. = 0.42Ω@VGS = 10 V - Low gate charge ( typical 35nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D .

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the ava.

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