- 2.0A, 650V, RDS(on) typ. = 4.3Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D .

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in.

SLF2N60C

SLF2N60UZ

SLF20N50C

SLF2500

SLF001

SLF002

SLF004

SLF006

SLF011

SLF012

SLF014

SLF016

SLF021

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