Datasheet4U Logo Datasheet4U.com

SLF20N50C - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 20A, 500V, RDS(on)typ. = 220mΩ@VGS = 10 V - Low gate charge ( typical 74.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP20N50C SLF20N50C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Not.

📥 Download Datasheet

Datasheet Details

Part number SLF20N50C
Manufacturer Maple Semiconductor
File Size 1.26 MB
Description N-Channel MOSFET
Datasheet download datasheet SLF20N50C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SLF20N50C 500V N-Channel MOSFET Msemitek
SLF2500 (SLFxx000) Fast Recovery High Voltage Rectifier Assembly Semtech Corporation
SLF2N60C N-Channel MOSFET SL SEMI
SLF001 CMOS Gate Array AMI
SLF002 CMOS Gate Array AMI

Other Datasheets by Maple Semiconductor

Part Number Description
SLF2N60UZ N-Channel MOSFET
SLF2N65UZ N-Channel MOSFET
SLF10N60C N-Channel MOSFET
SLF10N60U N-Channel MOSFET
SLF10N65C N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
SLP20N50C / SLF20N50C SLP20N50C / SLF20N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 20A, 500V, RDS(on)typ. = 220mΩ@VGS = 10 V - Low gate charge ( typical 74.
Published: |