MDIS2N65B mosfet equivalent, n-channel trench mosfet.
* VDS = 650V
* ID = 1.95A
* RDS(ON) ≤ 4.5Ω
@VGS = 10V @VGS = 10V
Applications
* Power supply
* Battery charger
* Ballast
G DS
TO-251-VS (I-PAK.
Features
* VDS = 650V
* ID = 1.95A
* RDS(ON) ≤ 4.5Ω
@VGS = 10V @VGS = 10V
Applications
* Power suppl.
The MDIS2N65B uses advanced MagnaChip’s MOSFET technology, which provides low on-state resistance, high switching performance and excellent quality.
MDIS2N65B is suitable device for SMPS, compact ballast, battery charger and general purpose applicati.
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