MDIS1903 mosfet equivalent, single n-channel trench mosfet.
VDS = 100V ID = 12.8A @VGS = 10V RDS(ON) (MAX)
< 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V
D
GDS
G S
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage Gate-.
Features
VDS = 100V ID = 12.8A @VGS = 10V RDS(ON) (MAX)
< 105mΩ @VGS = 10V < 110mΩ @VGS = 6.0V
D
GDS
G S
Abs.
The MDIS1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDIS1903 is suitable device for DC to DC converter and general purpose applications.
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