CGHV40200PP hemt equivalent, gan hemt.
* Up to 3.0 GHz Operation
* 21 dB Small Signal Gain at 1.8 GHz
* 250 W typical PSAT
* 67% Efficiency at PSAT
* 50 V Operation
Package Type: 440199 PN.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40200PP ideal for linear and .
The CGHV40200PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40200PP, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs off.
Image gallery
TAGS
Download