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CG2H40025 Datasheet, MACOM

CG2H40025 hemt equivalent, rf power gan hemt.

CG2H40025 Avg. rating / M : 1.0 rating-11

datasheet Download (1.24MB)

CG2H40025 Datasheet

Features and benefits


* Up to 6 GHz Operation
* 17 dB Small Signal Gain at 2.0 GHz
* 15 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 70% Efficiency at PSAT
* 2.

Application

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and co.

Description

The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer h.

Image gallery

CG2H40025 Page 1 CG2H40025 Page 2 CG2H40025 Page 3

TAGS

CG2H40025
Power
GaN
HEMT
CG2H40010
CG2H40035
CG2H40045
MACOM

Manufacturer


MACOM
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