CG2H40025 hemt equivalent, rf power gan hemt.
* Up to 6 GHz Operation
* 17 dB Small Signal Gain at 2.0 GHz
* 15 dB Small Signal Gain at 4.0 GHz
* 30 W typical PSAT
* 70% Efficiency at PSAT
* 2.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and co.
The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer h.
Image gallery
TAGS
Download (Size : 1.24MB)