Datasheet Summary
25 W, 28 V RF Power GaN HEMT
Cree’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40025 ideal for linear and pressed amplifier circuits. The transistor is available in a screw-down, flange package and solder-down, pill packages.
PPNa: cCkGa2gHe4T0y0p2e5: 4P4a0n1d96CGa2ndH4404002156F6
Features
- Up to 6 GHz Operation
- 17 dB Small Signal Gain at 2.0 GHz
- 15 dB Small Signal Gain at 4.0 GHz
- 30 W typical...
