Datasheet Details
| Part number | CG2H40010 |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 942.02 KB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H40010-MACOM.pdf |
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Overview: CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT.
| Part number | CG2H40010 |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 942.02 KB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H40010-MACOM.pdf |
|
|
|
The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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CG2H40010 | RF Power GaN HEMT | CREE |
| Part Number | Description |
|---|---|
| CG2H40025 | RF Power GaN HEMT |
| CG2H40045 | RF Power GaN HEMT |
| CG2H40120 | 28V RF Power GaN HEMT |
| CG2H30070F | RF Power GaN HEMT |