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XP1080-QU - Power Amplifier

Download the XP1080-QU datasheet PDF. This datasheet also covers the XP1080-QU-MA variant, as both devices belong to the same power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept.

The amplifier contains an integrated, temperature compensated, on-chip power detector.

Key Features

  •  Linear Power Amplifier.
  •  On-Chip Power Detector.
  •  Output Power Adjust.
  •  25.0 dB Small Signal Gain.
  •  +27.0 dBm P1dB Compression Point.
  •  +38.0 dBm OIP3.
  •  Lead-Free 7 mm 28-lead SMD Package.
  •  RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (XP1080-QU-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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XP1003 GaAs MMIC Power Amplifier Mimix Broadband
XP1003-BD Power Amplifier Mimix Broadband

Other Datasheets by MACOM Technology Solutions

Part Number Description
XP1005-BD Power Amplifier
XP1031-QK Power Amplifier
XP1035-QH Power Amplifier
XP1039-QJ Power Amplifier
XP1042-QT Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP1080-QU Power Amplifier 37.0 - 40.0 GHz Features  Linear Power Amplifier  On-Chip Power Detector  Output Power Adjust  25.0 dB Small Signal Gain  +27.0 dBm P1dB Compression Point  +38.0 dBm OIP3  Lead-Free 7 mm 28-lead SMD Package  RoHS* Compliant and 260°C Reflow Compatible Description The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.