XP1080-QU
Features
- Linear Power Amplifier
- On-Chip Power Detector
- Output Power Adjust
- 25.0 d B Small Signal Gain
- +27.0 d Bm P1d B pression Point
- +38.0 d Bm OIP3
- Lead-Free 7 mm 28-lead SMD Package
- Ro HS- pliant and 260°C Reflow patible
Description
The XP1080-QU is a four stage 37.0-40.0 GHz packaged Ga As MMIC power amplifier that has a small signal gain of 25.0 d B with a +38.0 d Bm Output Third Order Intercept. The amplifier contains an integrated, temperature pensated, on-chip power detector. This MMIC uses M/A- Technology Solutions’ Ga As p HEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The device es in a Ro HS pliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.
Ordering Information
Part Number XP1080-QU-0N00 XP1080-QU-0N0T XP1080-QU-EV1
Package bulk quantity tape and reel evaluation...
