MAGX-000035-01000S transistor equivalent, power transistor.
* GaN Depletion-Mode HEMT Microwave Transistor
* Common-Source configuration
* No internal matching
* Broadband Class AB operation
* RoHS* Compli.
Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, b.
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance tr.
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