MAGX-000035-010000 datasheet, transistor equivalent, MA-COM

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Features and benefits

* GaN Depletion-Mode HEMT Microwave Transistor
* Common-Source configuration
* No internal matching
* Broadband Class AB operation
* RoHS* Compli.

Application

Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, b.

Description

The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance tr.

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