MAGX-000035-01000P datasheet, transistor equivalent, MA-COM

Features and benefits

* GaN on SiC D-Mode Transistor Technology
* Unmatched, Ideal for Pulsed / CW Applications
* 50 V Typical Bias, Class AB
* Common-Source Configuration
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Application

* 50 V Typical Bias, Class AB
* Common-Source Configuration
* Thermally-Enhanced 3 x 6 mm 14-Lead DFN
* .

Description

The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use .

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