MA4AGFCP910
Features
Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection Ro HS pliant
Rev. V5
Chip Dimensions MA4AGP907 and MA4AGFCP910
Description
M/A-'s MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (Al Ga As) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC product, (0.1ps) and 2-3n S switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly.
Applications
The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 allows their use through millimeter frequencies for RF switches and switched...
