LPM9029C mosfet equivalent, n and p-channel enhancement power mosfet.
* Trench Technology
* NMOS:
VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V
* PMOS: VPDS=-20V, IPD=-4.5A RPDS(ON) < 100mΩ @ VGS=-2.5V .
* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and c.
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