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LPM9022 Datasheet Preview

LPM9022 Datasheet

Dual N -Channel Enhancement Power MOSFET

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Preliminary Datasheet LPM9022
Dual N -Channel Enhancement Power MOSFET
General Description
The LPM9022 integrates two N-Channel enhancement
MOSFET Transistor. It uses advanced trench
technology and design to provide excellent RDS(ON)
with low gate charge. This device is suitable for using
in DC-DC conversion, power switch and charging
circuit. Standard Product LPM9022 is Pb-free and
Halogen-free.
Features
Trench Technology
Single NMOS: VDS=20V, ID=6A
RDS(ON) < 26mΩ @ VGS=2.5V
RDS(ON) < 20mΩ @ VGS=4.5V
Super high density cell design
Extremely Low Threshold Voltage
Small package DFN-6L 2*3mm
Order Information
LPM9022 □ □ □
F: Pb-Free
Package Type
QV: DFN-6L
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin Configurations
S1 1
S1 2
G1 3
Pad
D1/2
6 S2
5 S2
4 G2
D1/2
G1 G2
S1 S2
Marking Information
Device
Marking Package
LPM9022
DFN-6L
Shipping
3K/REEL
Pin Description
Pin Number
1,2
3
4
5,6
Bottom Pad
Pin Description
Source Of NMOS1
Gate Of NMOS1
Gate Of NMOS2
Source Of NMOS2
Drain Of Both NMOS
LPM9022-01
Jun.-2014
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 1 of 4




Lowpowersemi

LPM9022 Datasheet Preview

LPM9022 Datasheet

Dual N -Channel Enhancement Power MOSFET

No Preview Available !

Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Power Dissipation
TA=25°C
TA=25°C
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
Preliminary Datasheet LPM9022
Symbol
VDS
VGS
TJ
TL
Tstg
LPM9022
20
±10
12
1.6
-40 to 150
260
-55 to 150
Unit
V
A
W
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance
Steady State
Symbol
RθJA
LPM9022
80
Unit
/W
LPM9022-01
Jun.-2014
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 2 of 4


Part Number LPM9022
Description Dual N -Channel Enhancement Power MOSFET
Maker Lowpowersemi
Total Page 4 Pages
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