LPM9022 mosfet equivalent, dual n -channel enhancement power mosfet.
* Trench Technology
* Single NMOS: VDS=20V, ID=6A
RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V
* Super high density cell design
* Extremely Low Thr.
* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circ.
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