LPM9024 Key Features
- Trench Technology
- Single NMOS: VDS=20V
- Super high density cell design
- Extremely Low Threshold Voltage
- Small package DFN-6L 2-2mm
| Part Number | Description |
|---|---|
| LPM9021 | Single P-Channel Power MOSFET |
| LPM9022 | Dual N -Channel Enhancement Power MOSFET |
| LPM9029C | N and P-Channel Enhancement Power MOSFET |
| LPM9007 | 30V/4A P-Channel Enhancement Mode Field Effect Transistor |
| LPM9017 | P-Channel Enhancement Mode Field Effect Transistor |