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LPM9022 - Dual N -Channel Enhancement Power MOSFET

General Description

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Single NMOS: VDS=20V, ID=6A RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
  • Super high density cell design.
  • Extremely Low Threshold Voltage.
  • Small package DFN-6L 2.
  • 3mm Order Information LPM9022.
  • F: Pb-Free Package Type QV: DFN-6L.

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Datasheet Details

Part number LPM9022
Manufacturer Lowpowersemi
File Size 454.73 KB
Description Dual N -Channel Enhancement Power MOSFET
Datasheet download datasheet LPM9022 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet LPM9022 Dual N -Channel Enhancement Power MOSFET General Description The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halogen-free. Features  Trench Technology  Single NMOS: VDS=20V, ID=6A RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V  Super high density cell design  Extremely Low Threshold Voltage  Small package DFN-6L 2*3mm Order Information LPM9022 □ □ □ F: Pb-Free Package Type QV: DFN-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.