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LSIC2SD065A08A - GEN2 SiC Schottky Diode

Description

This series of silicon carbide (SiC) Schottky diodes has neg- SiC SchottklmiygaibxDliemiruoemvdeorespeerraetcinovgejruyncctuiorrnentet,mhpigehrastuurrgeeocfa1p7a5b°ilCit.yT, haensdea diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are de

Features

  • AEC-Q101 qualified.
  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes Circuit Diagram TO-220-2L Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current.

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GEN2 SiC Schottky Diode LSIC2SD065A08A, 650 V, 8 A, TO-220-2L LSIC2SD065A08A 650 V, 8 A SiC Schottky Barrier Diode RoHS Pb Description This series of silicon carbide (SiC) Schottky diodes has neg- SiC SchottklmiygaibxDliemiruoemvdeorespeerraetcinovgejruyncctuiorrnentet,mhpigehrastuurrgeeocfa1p7a5b°ilCit.yT, haensdea diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
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