LSIC1MO120G0025 mosfet equivalent, n-channel sic mosfet.
* Optimized for high-frequency, high-efficiency applications
* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switc.
* Extremely low gate charge and output capacitance
* Low gate resistance for high-frequency switching
* Norm.
of the resonance method for measuring RG, refer to the JEDEC Standard JESD24-11 test method
Max -
100 -
100 100 32
4 -
-
Unit V µA nA
V
3
Specifications are subject to change without notice.
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