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SiC MOSFET
LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L
LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET
RoHS Pb
Product Summary
Characteristics VDS
Typical RDS(ON) ID ( TC ≤ 100 °C)
Value 1200 160
14
Unit V
mΩ A
Circuit Diagram TO-247-3L
1 23
Environmental
• Littelfuse “RoHS” logo = RoHS RoHS conform
• Littelfuse “HF” logo = Halogen Free
• Littelfuse “Pb-free” logo Pb = Pb-free lead plating
* * Body diode
Features
• Optimized for highfrequency, high-efficiency applications
• Extremely low gate charge and output capacitance
• Low gate resistance for high-frequency switching
• Normally-off operation at all temperatures
• Ultra-low on-resistance
• Halogen-free, RoHS compliant and lead-free
Applications
• High-frequency applications
• Solar Inverters
• Switc
LSIC1MO120E0160 Datasheet
