L2SC3356WT1G High-Frequency Amplifier Transistor
• We declare that the material of product compliance with RoHS requirements.
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V.
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC335.
Image gallery
Stock and Price
Download