L2SC3356WT1G transistor equivalent, high-frequency amplifier transistor.
* We declare that the material of product compliance with RoHS requirements.
* Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA,.
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SC3356WT1G S-L2SC3356WT1G.
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control .
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