MR45V100A edram equivalent, 1m-bit edram.
* 131,072-word 8-bit configuration (Serial Peripher.
because the device is guaranteed for the write/read tolerance of 1013 cycles per bit and the rewrite count can be exten.
The MR45V100A is a nonvolatile 128Kword x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V100A is accessed using Serial Peripheral Interface. Unlike SRAMs, this device.
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