Datasheet Details
| Part number | MR45V200A |
|---|---|
| Manufacturer | LAPIS |
| File Size | 245.62 KB |
| Description | FeRAM |
| Download | MR45V200A Download (PDF) |
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| Part number | MR45V200A |
|---|---|
| Manufacturer | LAPIS |
| File Size | 245.62 KB |
| Description | FeRAM |
| Download | MR45V200A Download (PDF) |
|
|
|
The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology.
The MR45V200A is accessed using Serial Peripheral Interface.Unlike SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data.
This device has no mechanisms of erasing and programming memory cells and blocks, such as those used for various EEPROMs.
MR45V200A FEDR45V200A-01 Issue Date: Jan.
31, 2014 2M(262,144-Word 8-Bit) FeRAM (Ferroelectric Random Access Memory) SPI.
| Part Number | Description |
|---|---|
| MR45V200B | FeRAM |
| MR45V256A | 256k-Bit FeRAM |
| MR45V032A | 32k-Bit FeRAM |
| MR45V064B | 64k-Bit FeRAM |
| MR45V100A | 1M-Bit EdRAM |
| MR44V064A | FeRAM |
| MR44V064B | 64k-Bit FeRAM |
| MR44V100A | 1M-Bit FeRAM |
| MR48V256C | FeRAM |