MR45V200A
Description
The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200A is accessed using Serial Peripheral SRAMs, this device, whose cells are nonvolatile, eliminates battery backup required to hold data.
Key Features
- 262,144-word 8-bit configuration (Serial Periphera
