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CZT2955 - PNP Silicon Power Transistor

Features

  • High current (max. 6A). Low voltage (max. 60V). 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current Power dissipation Thermal resistance,Junctiion-to-ambient Junction temperature Storage temperature Symbol VCBO VCER VCEO.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type 2.0W Surface Mount Complementary PNP Silicon Power Transistor KZT2955 (CZT2955) SOT-223 Transistors IC Unit: mm +0.2 3.50-0.2 Features High current (max. 6A). Low voltage (max. 60V). 6.50 +0.2 -0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current Power dissipation Thermal resistance,Junctiion-to-ambient Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO IC IB PD R JA Rating -100 -70 -60 -7 -6 -3 2 62.