Datasheet4U Logo Datasheet4U.com

CZT3055 - NPN Silicon Power Transistor

Features

  • High current (max. 6A). Low voltage (max. 60V). Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current power dissipation Thermal resistance Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCER.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CZT3055 TRANSISTOR TY Semiconductor
CZT3055 SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS Central Semiconductor
CZT3019 NPN SILICON TRANSISTOR Central Semiconductor Corp
CZT3120 SURFACE MOUNT NPN SILICON TRANSISTOR Central Semiconductor
CZT3150 SURFACE MOUNT NPN SILICON TRANSISTOR Central Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
CZT127 Surface Mount PNP Silicon Power Darlington Transistor
CZT2000 PNP Silicon Extremely High Voltage Darlington Transistor
CZT2955 PNP Silicon Power Transistor
CZT5401 PNP Silicon Transistor

Full PDF Text Transcription

Click to expand full text
SMD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055(CZT3055) SOT-223 6.50 +0.2 -0.2 Transistors IC Features High current (max. 6A). Low voltage (max. 60V). Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 2 Collector 1 2 2.9 4.6 3 +0.1 0.70-0.1 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector - emitter votage Collector-emitter voltage Emitter-base voltage Collector current Base current power dissipation Thermal resistance Junction-to-Ambient Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO IC IB PD R JA Rating 100 70 60 7 6 3 2 62.
Published: |