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CZT5401 - PNP Silicon Transistor

Features

  • SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Electrical Characteristics Ta = 25 Symbol ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE fT Cob h.

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SMD Type Transistors PNP Silicon Transistor CZT5401 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Electrical Characteristics Ta = 25 Symbol ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE fT Cob hfe NF Testconditons VCB=100V VCB=100V, TA=150 VEB=3.0V IC=100ìA IC=1.0mA IE=10ìA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.
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