13N50H mosfet equivalent, n-channel mosfet.
* RDS(on)=0.48Ω @ VGS=10V
* Low gate charge ( typical 43nC)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
3. Pi.
such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on h.
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