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Unisonic Technologies

13N50 Datasheet Preview

13N50 Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
13N50
Preliminary
500V N-CHANNEL MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 13N50 is an N-Channel enhancement mode power MOSFET.
The device adopts planar stripe and uses DMOS technology to minimize
and provide lower on-state resistance and faster switching speed. It can
also withstand high energy pulse under the avalanche and commutation
mode conditions.
The UTC 13N50 is ideally suitable for high efficiency switch mode
power supply, power factor correction, electronic lamp ballast based on half
bridge topology.
„ FEATURES
* RDS(ON) =0.48@VGS = 10 V
* Ultra low gate charge (typical 43 nC )
* Low reverse transfer Capacitance ( CRSS = typical 20pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
„ SYMBOL
1
1
1
TO-220
TO-220F
TO-220F1
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13N50L-TA3-T
13N50G-TA3-T
13N50L-TF3-T
13N50G-TF3-T
13N50L- TF1-T
13N50G-TF1-T
Package
TO-220
TO-220F
TO-220F1
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-362.c




Unisonic Technologies

13N50 Datasheet Preview

13N50 Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

13N50
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 500 V
Gate-Source Voltage
VGSS ±30 V
Continuous Drain Current
Pulsed Drain Current (Note 2)
ID
IDM
13 A
52 A
Avalanche Current (Note 2)
IAR 13 A
Single Pulsed Avalanche Energy (Note 3)
Repetitive Avalanche Energy (Note 2)
EAS
EAR
810 mJ
17 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation (TC=25°C)
TO-220
TO-220F
PD
168 W
48 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 9.3mA, IAS = 13A, VDD = 50V, RG= 25,Starting TJ = 25°C
4. ISD13.A, di/dt 200A/μs, VDDBVDSS, Starting TJ= 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
0.74
2.58
UNIT
°C/W
°C/W
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
www.DatTauSrhne-eOtf4fUD.ecolamy Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SYMBOL
TEST CONDITIONS
MIN
BVDSS
VGS = 0V, ID = 250μA
IDSS VDS = 500V, VGS = 0V
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
BVDSS/△TJ
ID = 250μA
Referenced to 25°C
500
VGS(TH)
RDS(ON)
gFS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 6.5A
VDS=50V, ID=6.25A (Note 1)
2.0
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDS=25V, VGS=0V, f=1.0MHz
VDD =250V, ID =13A
RG =25(Note 1,2)
VDS=400V, ID=13A, VGS=10 V
(Note 1, 2)
TYP MAX UNIT
1
100
-100
V
μA
nA
nA
0.5 V/°C
4.0
0.33 0.43
10
V
S
1800 2300
245 320
25 35
pF
pF
pF
40 90
140 290
100 210
85 180
45 60
11
22
nS
nS
nS
nS
nC
nC
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-362.c


Part Number 13N50
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
Total Page 6 Pages
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