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AO3418 - N-Channel MOSFET

General Description

The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

AO3418L ( Green Product ) is offered in a lead-free package.

Key Features

  • VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General.

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Datasheet Details

Part number AO3418
Manufacturer KERSEMI
File Size 818.43 KB
Description N-Channel MOSFET
Datasheet download datasheet AO3418 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package.