KMB060N40BA mosfet equivalent, n-channel trench mosfet.
VDSS=40V, ID=60A. Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V : RDS(ON)=11m (Max.) @ VGS=4.5V Super High Dense Cell Design. High Power and Current .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply.
FEATURES VDSS=40V, ID=60A. Low Dra.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 51.37KB)