VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max.) @ VGS=4.5V RDS(ON)=65m (Max.) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L.

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. FEATURES VDSS=20V, ID=3.6A Drain-Source ON Resistanc.

KMA3D0N20SA

KMA3D7P20SA

KMA310

KMA310A

KMA320

KMA320A

KMA010-xxx

KMA010P20Q

KMA1117

KMA199

KMA199E

KMA200

KMA210

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts