KMA3D0N20SA datasheet, mosfet equivalent, KEC

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Features and benefits

A H 2 G 1 3 VDSS=20V, ID=3A Drain-Source ON Resistance RDS(ON)=60m (Max.) @ VGS=4.5V RDS(ON)=120m (Max.) @ VGS=2.5V Super Hige Dense Cell Design P P DIM A B C D E G.

Description

www.DataSheet4U.com KMA3D0N20SA N-Ch Trench MOSFET This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment .

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