KF10N65F transistor equivalent, n channel mos field effect transistor.
VDSS=650V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.95 @VGS=10V Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25 )
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RATING
Drain-Source Voltage Gat.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
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