VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.69 Qg(typ.)= 29.5nC @VGS=10V D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B.

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies..

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