KF10N50P transistor equivalent, n-channel mos field effect transistor.
VDSS=500V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.65 @VGS=10V Qg(typ.)= 19.5nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL KF10N50P KF10N50F UNIT
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This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
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