Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCBO(BR) Collector-base breakdown voltage
IC=10 A ;IE=0
VCEO(BR) Collector-emitter breakdown voltage IC=10mA ;IB=0
www.DataSheet4U.VcEoBmO(BR)
VCEsat
Emitter-base breakdown voltage
Collector-emitter saturation voltage
IE=10 A ;IC=0
IC=50mA ;IB=5mA
ICBO Collector cut-off current
VCB=200V;IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=10mA ; VCE=10V
COB Output capacitance
IE=0; VCB=50V;f=1MHz
fT Transition frequency
IC=10mA ; VCE=30V
hFE-1 classifications
RO
Y
40-80
70-140 120-240
www.jmnic.com
2SC1507
MIN TYP. MAX UNIT
300 V
300 V
7V
2.0 V
100 A
100 A
40 240
4 pF
40 80
MHz
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