SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=100µA;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=100µA; IC=0
VCEsat Collector-emitter saturation voltage IC=100mA IB=10m A
VBE Base-emitter on voltage
IC=50mA ; VCE=10V
hFE-1
DC current gain
IC=10mA ; VCE=10V
hFE-2
DC current gain
IC=50mA ; VCE=10V
ICBO Collector cut-off current
VCB=300V ; IE=0
COB Output capacitance
IE=0; VCB=30V;f=1MHz
fT Transition frequency
IE=20mA ; VCB=30V
Product Specification
2SC1501
MIN TYP. MAX UNIT
300 V
300 V
5V
5.0 V
1.2 V
30
30 200
100 µA
8 pF
55 MHz
hFE-2 classifications
PQR
S
30-60 50-100 80-150 100-200
2
Free Datasheet http://www.Datasheet4U.com
