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CJP50N06 - N-Channel MOSFET

Description

The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

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Datasheet Details

Part number CJP50N06
Manufacturer JCET
File Size 1.11 MB
Description N-Channel MOSFET
Datasheet download datasheet CJP50N06 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP50N06 V(BR)DSS 60V N-Channel Power MOSFET RDS(on)MAX   20mΩ@10V ID 50A TO-220-3L-C   GENERAL DESCRIPTION The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply 1. GATE 2. DRAIN 3.
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