CJP55H12 mosfet equivalent, n-channel mosfet.
FEATURE
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
The CJP55H12 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATURE
* High density cell design for ultra low Rdson
* Fully characterized avalanc.
Image gallery
TAGS
Download (Size : 374.56KB)