z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 2.Drain TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1.G.

such as power suplies, converters, power motor controls and bridge circuits. FEATURES z Low RDS(on) z Lower Capacitance.

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switch.

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