CJP05N60 mosfet equivalent, n-channel mosfet.
z Low RDS(on) z Lower Capacitances
z Lower Total Gate Charge
z Tighter VSD Specifications z Avalanche Energy Specified
2.Drain
TO-220-3L
1. GATE 2. DRAIN 3. SOURCE
1.G.
such as power suplies, converters, power motor controls and bridge circuits.
FEATURES z Low RDS(on) z Lower Capacitance.
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switch.
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